Перегляд за автором "Red’ko, R.A."

Результати 1-7 з 7

Defect reorganization induced by pulsed magnetic field in porous InP

Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)

We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination ...
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals

Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)

We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when ...
Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

Konakova, R.V.; Red’ko, S.M.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)

The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ...
Influence of pulse magnetic fields treatment on optical properties of GaAs based films

Konakova, R.V.; Sosnova, M.V.; Red’ko, S.M.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)

Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed ...
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments

Milenin, G.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation

Milenin, G.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown ...
Porous nanostructured InP: technology, properties, application

Arsentyev, I. N.; Bobyl, A.B.; Konnikov, S.G.; Tarasov, I.S.; Ulin, V.P; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Belyaev, A.E.; Konakova, R.V.; Kudryk, Ya.Ya.; Kamalov, A.B.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP ...

Результати 1-7 з 7

Пошук

Розширений пошук

Перегляд

Вся бібліотека

Перегляд за автором "Red’ko, R.A."

Репозиторій DSpace/Manakin

Перегляд за автором "Red’ko, R.A."

Пошук

Перегляд

Вся бібліотека

Мій обліковий запис